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Growth of defect-free InAs Nanowires using Pd catalyst

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dc.contributor.authorXu, Hongyien_AU
dc.contributor.authorGuo, Y.en_AU
dc.contributor.authorLiao, Zhi-Mingen_AU
dc.contributor.authorZou, Jinen_AU
dc.contributor.authorGao, Qiangen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.coverage.spatialMelbourne Australia
dc.date.accessioned2015-12-10T22:56:25Z
dc.date.createdDecember 12-14 2012
dc.date.issued2012
dc.date.updated2016-02-24T10:19:33Z
dc.description.abstractTo explore the growth mechanism and the effect of non-gold catalysts in growing III-V epitaxial nanowires, InAs nanowires were grown on GaAs(111)B substrates using annealed Pd thin film as catalyst. Through detailed scanning and transmission electron microscopy (SEM/TEM) characterisations, it is found that when the catalyst size is less than 50 nm (from annealing the Pd thin film), defect-free zinc-blende structured epitaxial InAs nanowires are grown along the <110> directions with four 111 side-facets. The common nanowire/catalyst interface is found to be the unusual 113 planes of the nanowires.
dc.identifier.isbn9781467330459
dc.identifier.urihttp://hdl.handle.net/1885/60229
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesConference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012)
dc.sourceCOMMAD 2012 Proceedings
dc.source.urihttp://commad2012.physics.unimelb.edu.au/
dc.subjectKeywords: Catalyst size; Defect-free; Growth mechanisms; Inas nanowires; Pd catalyst; Pd thin films; Scanning and transmission electron microscopy; Zinc-blende; Catalysts; Defects; Epitaxial growth; Microelectronics; Thin films; Transmission electron microscopy; Na
dc.titleGrowth of defect-free InAs Nanowires using Pd catalyst
dc.typeConference paper
local.bibliographicCitation.lastpage32
local.bibliographicCitation.startpage31
local.contributor.affiliationXu, Hongyi, University of Queensland
local.contributor.affiliationGuo, Y., University of Queensland
local.contributor.affiliationLiao, Zhi-Ming, University of Queensland
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidGao, Qiang, u4006742
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor100706 - Nanofabrication, Growth and Self Assembly
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationU3594520xPUB529
local.identifier.doi10.1109/COMMAD.2012.6472345
local.identifier.scopusID2-s2.0-84875605411
local.type.statusPublished Version

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