Characterisation of molecular nitrogen in ion-bombarded compound semiconductors by synchrotron-based absorption and emission spectroscopies
dc.contributor.author | Bozanic, A | |
dc.contributor.author | Majlinger, Z | |
dc.contributor.author | Petravic, Mladen | |
dc.contributor.author | Gao, Qiang | |
dc.contributor.author | Llewellyn, David | |
dc.contributor.author | Crotti, C. | |
dc.contributor.author | Yang, Y W | |
dc.contributor.author | Kim, K J | |
dc.contributor.author | Kim, Bongsoo | |
dc.date.accessioned | 2015-12-13T22:48:28Z | |
dc.date.issued | 2009 | |
dc.date.updated | 2016-02-24T09:41:56Z | |
dc.description.abstract | We have studied formation of molecular nitrogen under low-energy nitrogen bombardment in a range of compound semiconductors by synchrotron-based X-ray photoelectron spectroscopy (XPS) around N 1s core-level and near-edge X-ray absorption fine structure (NEXAFS) around N K-edge. We have found interstitial molecular nitrogen, N2, in all samples under consideration. The presence of N2 produces a sharp resonance in low-resolution NEXAFS spectra at around 400.8 eV, showing the characteristic vibrational fine structure in high-resolution measurements. At the same time, a new peak, shifted towards higher binding energies, emerges in all N 1s photoemission spectra. We have found a shift of 7.6 eV for In-based compounds and 6.7 eV for Ga-based compounds. Our results demonstrate that NEXAFS and core-level XPS are complementary techniques that form a powerful combination for studying molecular nitrogen in compound semiconductors, such as GaSb, InSb, GaAs, InN, GaN or ZnO. | |
dc.identifier.issn | 0042-207X | |
dc.identifier.uri | http://hdl.handle.net/1885/80109 | |
dc.publisher | Pergamon Press | |
dc.source | Vacuum | |
dc.subject | Keywords: Absorption and emission spectroscopy; Characterisation; Compound semiconductors; Core levels; GaAs; High-resolution measurements; Low energies; Molecular nitrogen; Near edge x ray absorption fine structure; NEXAFS; Nitrogen bombardment; Photoemission spec Molecular nitrogen; NEXAFS; Semiconductors; XPS | |
dc.title | Characterisation of molecular nitrogen in ion-bombarded compound semiconductors by synchrotron-based absorption and emission spectroscopies | |
dc.type | Journal article | |
local.bibliographicCitation.issue | 1 | |
local.bibliographicCitation.lastpage | 40 | |
local.bibliographicCitation.startpage | 37 | |
local.contributor.affiliation | Bozanic, A, University of Rijeka | |
local.contributor.affiliation | Majlinger, Z, University of Rijeka | |
local.contributor.affiliation | Petravic, Mladen, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Gao, Qiang, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Llewellyn, David, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Crotti, C., C.N.R. – Istituto Struttura della Materia | |
local.contributor.affiliation | Yang, Y W, National Synchrotron Radiation Research Center | |
local.contributor.affiliation | Kim, K J, Pohang University of Science and Technology | |
local.contributor.affiliation | Kim, Bongsoo, Pohong University of Science and Technology | |
local.contributor.authoremail | u7400676@anu.edu.au | |
local.contributor.authoruid | Petravic, Mladen, u8905251 | |
local.contributor.authoruid | Gao, Qiang, u4006742 | |
local.contributor.authoruid | Llewellyn, David, u7400676 | |
local.description.embargo | 2037-12-31 | |
local.description.notes | Imported from ARIES | |
local.identifier.absfor | 020400 - CONDENSED MATTER PHYSICS | |
local.identifier.absseo | 970102 - Expanding Knowledge in the Physical Sciences | |
local.identifier.ariespublication | f5625xPUB8432 | |
local.identifier.citationvolume | 84 | |
local.identifier.doi | 10.1016/j.vacuum.2009.04.020 | |
local.identifier.scopusID | 2-s2.0-69249203571 | |
local.identifier.uidSubmittedBy | f5625 | |
local.type.status | Published Version |
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