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Effect of gettered iron on recombination in diffused regions of crystalline silicon wafers

dc.contributor.authorMacdonald, D.
dc.contributor.authorMäckel, H.
dc.contributor.authorCuevas, A.
dc.date.accessioned2015-12-01T05:45:37Z
dc.date.available2015-12-01T05:45:37Z
dc.date.issued2006-02-28
dc.date.updated2015-12-08T02:43:01Z
dc.description.abstractCrystalline silicon wafers, intentionally precontaminated with iron, were diffused with phosphorus and boron, and the recombination properties of the bulk and diffused regions extracted from injection-dependent carrier lifetime measurements. While the phosphorus diffusions were found to getter more than 99% of the iron from the bulk, the borondiffusions only extracted 65% in the best case. The presence of this gettered iron caused significant additional recombination in the boron diffused layers, while it had no measurable impact on the phosphorus diffused regions. This may be a consequence of the small capture cross section for holes of interstitialiron.
dc.description.sponsorshipThis work has been supported by the Australian Research Council.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/16944
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 1/12/15). Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2181199
dc.sourceApplied Physics Letters
dc.subjectKeywords: Boron; Diffusion; Iron; Phosphorus; Silicon; WSI circuits; Gettered iron; Interstitial iron; Recombination in diffused regions; Crystalline materials
dc.titleEffect of gettered iron on recombination in diffused regions of crystalline silicon wafers
dc.typeJournal article
local.bibliographicCitation.issue9en_AU
local.bibliographicCitation.startpage092105en_AU
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationMackel, Helmut, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.authoruidu9718154en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor091299en_AU
local.identifier.absseo850404en_AU
local.identifier.absseo850504en_AU
local.identifier.ariespublicationu4251866xPUB2en_AU
local.identifier.citationvolume88en_AU
local.identifier.doi10.1063/1.2181199en_AU
local.identifier.scopusID2-s2.0-33644696867
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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