Carrier dynamics in InP nanopillar arrays fabricated by low-damage etching

Date

2013-05-31

Authors

Naureen, S.
Shahid, N.
Gustafsson, A.
Liuolia, V.
Marcinkevičius, S.
Anand, S.

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

We present a comprehensive characterization of the optical quality of InP nanopillars (NPs) fabricated by a top down approach using micro-photoluminescence (μ-PL), time-resolved PL, and cathodoluminescence (CL). A lattice matched InGaAs layer provided beneath the 1 μm tall NPs functions as a “detector” in CL for monitoring carrier diffusion in InP NP. Carrier feeding to the InGaAs layer indicated by a double exponential PL decay is confirmed through CL mapping. Carrier lifetimes of over 1 ns and the appreciably long diffusion lengths (400–700 nm) in the InP NPs indicate very low surface damage making them attractive for optoelectronic applications.

Description

Keywords

Keywords: Carrier diffusions; Carrier dynamics; Diffusion length; Double exponential; Nano-pillar arrays; Optical qualities; Optoelectronic applications; Top down approaches; Semiconducting indium; Nanostructures

Citation

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.4808447

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