The crystallisation of deep amorphous wells in silicon produced by ion implantation
Date
2001
Authors
Liu, A. C. Y.
McCallum, Jeffrey C.
Wong-Leung, Jennifer
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
The crystallisation of deep amorphous wells is studied. These model systems are formed by high energy self implantation through a mask into silicon. The amorphised regions have an aspect ratio opposite to that employed in previous experiments. At elevated temperatures crystallisation proceeds inwards with the amorphous-phase being transformed through both lateral and vertical solid-phase epitaxy (SPE). Complementary information is obtained from performing plan view and cross-sectional transmission electron microscopy analyses. It is discovered that the recovery of the amorphous material is governed by the dynamics of solid-phase epitaxy and that unique secondary structures result from the heat treatment.
Description
Keywords
Keywords: Amorphization; Aspect ratio; Crystallization; Epitaxial growth; Heat treatment; Ion implantation; Masks; Transmission electron microscopy; Lateral solid phase epitaxy; Vertical solid phase epitaxy; Amorphous silicon Amorphous silicon; Ion implantation; Lateral solid phase epitaxy; Transmission electron microscopy
Citation
Collections
Source
Nuclear Instruments and Methods in Physics Research: Section B
Type
Journal article
Book Title
Entity type
Access Statement
License Rights
Restricted until
2037-12-31
Downloads
File
Description