Improved resistive switching properties of solution-processed TiOx film by incorporating atomic layer deposited TiO2 layer
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Kim, Insung
Jung, Seungjae
Shin, Jungho
Biju, Kuyyadi P.
Seo, Kyungah
Siddik, Manzar
Kong, Jaemin
Liu, Xinjun
Lee, Kwanghee
Hwang, Hyunsang
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Japan Society of Applied Physics
Abstract
Resistive switching characteristics of bilayered titanium oxides layer were investigated. To improve the relatively poor electrical characteristics of solution-processed TiOx active layers, we incorporated an additional thin TiO2 (∼8 nm) layer by atomic
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Japanese Journal of Applied Physics
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2037-12-31
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