Nonlinear diffraction in orientation-patterned semiconductors

Date

2015

Authors

Karpinski, Pawel
Chen, Xin
Shvedov, Vladlen
Hnatovsky, Kyrylo (Cyril)
Grisard, Arnaud
Lallier, Eric
Luther-Davies, Barry
Krolikowski, Wieslaw
Sheng, Yan

Journal Title

Journal ISSN

Volume Title

Publisher

Optical Society of America

Abstract

This work represents experimental demonstration of nonlinear diffraction in an orientation-patterned semiconducting material. By employing a new transverse geometry of interaction, three types of second-order nonlinear diffraction have been identified according to different configurations of quasi-phase matching conditions. Specifically, nonlinearˇ Cerenkov diffraction is defined by the longitudinal quasi-phase matching condition, nonlinear Raman-Nath diffraction satisfies only the transverse quasi-phase matching condition, and nonlinear Bragg diffraction fulfils the full vectorial quasi-phase matching conditions. The study extends the concept of transverse nonlinear parametric interaction toward infrared frequency conversion in semiconductors. It also offers an effective nondestructive method to visualise and diagnose variations of second-order nonlinear coefficients inside semiconductors.

Description

Keywords

Citation

Source

Optics Express

Type

Journal article

Book Title

Entity type

Access Statement

Open Access

License Rights

DOI

10.1364/OE.23.014903

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