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Intermixing induced resonance shift in GaAs/AlxOy distributed Bragg resonators

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Date

1999

Authors

Cohen, M
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

The effect of ion implantation-induced interdiffusion on the resonant wavelength of GaAs/AlxOy distributed Bragg reflectors is investigated. As interdiffusion becomes stronger, the resonant wavelength is seen to redshift. Shifts of more than 60 nm could be achieved for center wavelengths around 800 nm. A model is proposed to explain this behavior. This model agrees well with previous lateral oxidation studies.

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Citation

URI

http://hdl.handle.net/1885/93669

Collections

ANU Research Publications

Source

Journal of Applied Physics

Type

Journal article

Book Title

Entity type

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DOI

Restricted until

2037-12-31

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