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Electron-pinned defect-dipoles for high-performance colossal permittivity materials

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Date

2013

Authors

Hu, Wanbiao
Liu, Yun
Withers, Raymond
Frankcombe, Terry
Noren, Lasse
Snashall, Amanda
Kitchin, Melanie
Smith, Paul
Gong, Bill
Chen, Hua

Journal Title

Journal ISSN

Volume Title

Publisher

Nature Publishing Group

Abstract

The immense potential of colossal permittivity (CP) materials for use in modern microelectronics as well as for high-energy-density storage applications has propelled much recent research and development. Despite the discovery of several new classes of CP

Description

Keywords

Keywords: Broad temperature ranges; Colossal permittivity; Defect engineering; High energy densities; Localized electrons; Low dielectric loss; Modern microelectronics; Systematic defect analysis; Dielectric losses; Materials; Microelectronics; Niobium compounds; O

Citation

URI

http://hdl.handle.net/1885/62289

Collections

ANU Research Publications

Source

Nature Materials

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1038/nmat3691

Restricted until

2037-12-31

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Description
01_Hu_Electron-pinned_defect-dipoles_2013.pdf (1.45 MB)

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