Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells
Loading...
Date
Authors
Du, Si
Fu, Lan
Jagadish, Chennupati
Tan, Hark Hoe
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Physics Publishing
Abstract
In this work, controlled band gap modifications in InGaAsP/InGaAs and AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. Photoluminescence spectroscopy was used for monitoring the changes in the optical
Description
Citation
Collections
Source
Semiconductor Science and Technology
Type
Book Title
Entity type
Access Statement
License Rights
Restricted until
2037-12-31
Downloads
File
Description