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Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells

Date

Authors

Du, Si

Fu, Lan

Jagadish, Chennupati

Tan, Hark Hoe

Publisher

Institute of Physics Publishing

Abstract

In this work, controlled band gap modifications in InGaAsP/InGaAs and AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. Photoluminescence spectroscopy was used for monitoring the changes in the optical

Keywords

Keywords: Band-gap modification; Dielectric capping layers; Impurity free vacancy disordering; InGaAs quantum wells; Inter-diffusion; Interfacial reactions; Optical properties of the quantum wells; Quantum well structures; Sub-lattices; Optical properties; Photolum

URI

http://hdl.handle.net/1885/39124

Collections

ANU Research Publications

Source

Semiconductor Science and Technology

Type

Journal article

DOI

10.1088/0268-1242/25/5/055014

Restricted until

2037-12-31

Downloads

File

Description

01_Du_Investigations_of_2010.pdf (1.33 MB)