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Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing

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dc.contributor.authorLemaitre, Maxime G.
dc.contributor.authorTongay, Sefaattin
dc.contributor.authorWang, Xiaotie
dc.contributor.authorVenkatachalam, Dinesh K.
dc.contributor.authorFridmann, Joel
dc.contributor.authorGila, Brent P.
dc.contributor.authorHebard, Arthur F.
dc.contributor.authorRen, Fan
dc.contributor.authorElliman, Robert G.
dc.contributor.authorAppleton, Bill R.
dc.date.accessioned2015-09-24T04:59:58Z
dc.date.available2015-09-24T04:59:58Z
dc.date.issued2012
dc.date.updated2016-02-24T09:33:27Z
dc.description.abstractA technique is presented to selectively graphitize regions of SiC by ion implantation and pulsed laser annealing (PLA). Nanoscale features are patterned over large areas by multi-ion beam lithography and subsequently converted to few-layer graphene via PLA in air. Graphitization occurs only where ions have been implanted and without elevating the temperature of the surrounding substrate. Samples were characterized using Raman spectroscopy, ion scattering/channeling, SEM, and AFM, from which the degree of graphitization was determined to vary with implantation species, damage and dose, laser fluence, and pulsing. Contrasting growth regimes and graphitization mechanisms during PLA are discussed.
dc.description.sponsorshipThis work is supported by the Office of Naval Research (ONR) under Contract Number 00075094 (BRA) and by the National Science Foundation (NSF) under Contract Number 1005301 (AFH).en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15690
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 24/09/15). Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Lemaitre, Maxime G., et al. "Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing." Applied Physics Letters 100.19 (2012): 193105.) and may be found at https://doi.org/10.1063/1.4707383
dc.sourceApplied Physics Letters
dc.subjectKeywords: AFM; Few-layer graphene; Growth regime; Ion scattering; Laser fluences; Low temperatures; Nanoscale features; Pulsed laser annealing; Site selective; Graphene; Graphite; Graphitization; Ion beam lithography; Pulsed lasers; Raman spectroscopy; Silicon carb
dc.titleLow-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing
dc.typeJournal article
local.bibliographicCitation.issue19en_AU
local.bibliographicCitation.lastpage4
local.bibliographicCitation.startpage193105en_AU
local.contributor.affiliationLemaitre, Maxine G., University of Florida, United States of Americaen_AU
local.contributor.affiliationTongay, Sefaattin, University of Florida, United States of Americaen_AU
local.contributor.affiliationWang, Ziaotie, University of Florida, United States of Americaen_AU
local.contributor.affiliationVenkatachalam, Dinesh, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationFridmann, Joel, University of Florida, United States of Americaen_AU
local.contributor.affiliationGila, Brent P., University of Florida, United States of Americaen_AU
local.contributor.affiliationHebard, Arthur F., University of Florida, United States of Americaen_AU
local.contributor.affiliationRen, Fan, University of Florida, United States of Americaen_AU
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationAppleton, Bill R., University of Florida, United States of Americaen_AU
local.contributor.authoruidu9012877en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor100706en_AU
local.identifier.absfor100708en_AU
local.identifier.absfor091205en_AU
local.identifier.absseo970110en_AU
local.identifier.absseo970109en_AU
local.identifier.absseo970102en_AU
local.identifier.ariespublicationf5625xPUB719en_AU
local.identifier.citationvolume100en_AU
local.identifier.doi10.1063/1.4707383en_AU
local.identifier.scopusID2-s2.0-84862063760
local.identifier.thomsonID000304108000073
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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