Self-Powered InP Nanowire Photodetector for Single-Photon Level Detection at Room Temperature
Date
2021-10-07
Authors
Zhu, Yi
Raj, Vidur
Li, Ziyuan
Tan, Hark Hoe
Jagadish, Chennupati
Fu, Lan
Journal Title
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Volume Title
Publisher
Wiley-VCH Verlag GMBH
Abstract
Highly sensitive photodetectors with single-photon level detection are one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing. Currently, most of the single-photon detection technologies require external biasing at high voltages and/or cooling to low temperatures, posing great limitations for wider applications. Here, InP nanowire array photodetectors that can achieve single-photon level light detection at room temperature without an external bias are demonstrated. Top-down etched, heavily doped p-type InP nanowires and n-type aluminium-doped zinc oxide (AZO)/zinc oxide (ZnO) carrier-selective contact are used to form a radial p–n junction with a built-in electric field exceeding 3 × 105 V cm−1 at 0 V. The device exhibits broadband light sensitivity and can distinguish a single photon per pulse from the dark noise at 0 V, enabled by its design to realize near-ideal broadband absorption, extremely low dark current, and highly efficient charge carrier separation. Meanwhile, the bandwidth of the device reaches above 600 MHz with a timing jitter of 538 ps. The proposed device design provides a new pathway toward low-cost, high-sensitivity, self-powered photodetectors for numerous future applications.
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Keywords
III–V nanowires, carrier-selective contact, photodetectors, self-powered, single-photon detection
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Source
Advanced Materials
Type
Journal article
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Open Access
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Author Accepted Manuscript