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Dissolution of metal precipitates in multicrystalline silicon during annealing and the protective effect of phosphorus emitters

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dc.contributor.authorTan, J.
dc.contributor.authorMacdonald, D.
dc.contributor.authorBennett, N.
dc.contributor.authorKong, D.
dc.contributor.authorCuevas, A.
dc.contributor.authorRomijn, I.
dc.date.accessioned2015-12-01T23:38:17Z
dc.date.available2015-12-01T23:38:17Z
dc.date.issued2007-07-24
dc.date.updated2015-12-09T09:37:18Z
dc.description.abstractThe degradation of the carrier lifetime in multicrystalline silicon due to the dissolution of metal precipitates during high temperature annealing is well known. This letter presents evidence indicating that the presence of phosphorus emitters during annealing can help reduce this recontamination. Part of the degradation observed is due to increased interstitial iron concentrations caused by the dissolution of iron precipitates during annealing. However, dissolution of other metals also seems to contribute to the reduced carrier lifetimes observed.
dc.description.sponsorshipThe authors would like to acknowledge the Australian Research Council for funding this work.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/16956
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 2/12/15). Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2766664
dc.sourceApplied Physics Letters
dc.subjectKeywords: Annealing; Carrier lifetime; Crystalline materials; Light emitting diodes; Silicon; Metal precipitates; Multicrystalline silicon; Phosphorus emitters; Precipitates
dc.titleDissolution of metal precipitates in multicrystalline silicon during annealing and the protective effect of phosphorus emitters
dc.typeJournal article
local.bibliographicCitation.issue4en_AU
local.bibliographicCitation.lastpage3
local.bibliographicCitation.startpage043505en_AU
local.contributor.affiliationTan, Jason, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationBennett, Neil, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationKong, Daniel, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationRomijn, I, ECN Solar Energy, Netherlandsen_AU
local.contributor.authoruidu9718154en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor091299en_AU
local.identifier.absfor091505en_AU
local.identifier.absseo850505en_AU
local.identifier.ariespublicationu4251866xPUB289en_AU
local.identifier.citationvolume91en_AU
local.identifier.doi10.1063/1.2766664en_AU
local.identifier.scopusID2-s2.0-34547418719
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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