Insights into single semiconductor nanowire heterostructures using time-resolved photoluminescence

Abstract

We review a number of time-resolved photoluminescence experiments which have provided new understanding of the physical properties of single nanowires and single semiconductor nanowire heterostructures. Specifically, TRPL spectroscopy has been used to understand more fully non-radiative surface and bulk defects, radiative defects in CdS, InP and GaAs nanowires, core-shell effects, polytypism in InP nanowires, many body effects in GaAs and InP nanowires, and type-II band alignments in ZB/WZ mixed phase nanowires. Show more