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Modelling silicon characterisation

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dc.contributor.authorCuevas, Andres
dc.date.accessioned2015-12-10T23:09:51Z
dc.date.issued2011
dc.date.updated2016-02-24T11:03:14Z
dc.description.abstractA versatile computer model is presented for the simulation of several characterization techniques commonly used to determine the electronic properties of silicon wafers and solar cells. Several different sets of empirical data for carrier mobility and carrier recombination in crystalline silicon can be optionally selected to investigate their impact on device performance. The model is applicable to arbitrary carrier injection conditions and compensated doping. It is an advanced tool that permits to predict the outcome of characterization experiments, design new ones, or to perform indepth post-measurement analysis and diagnosis of silicon materials.
dc.identifier.issn1876-6102
dc.identifier.urihttp://hdl.handle.net/1885/63467
dc.publisherElsevier
dc.sourceEnergy Procedia
dc.subjectKeywords: Carrier injection; Carrier recombination; Characterisation; Characterization techniques; Computer models; Crystalline silicons; Device performance; Empirical data; Modelling; Post-measurement; Silicon materials; Carrier mobility; Computer simulation; Crys Characterisation; Modelling
dc.titleModelling silicon characterisation
dc.typeJournal article
local.bibliographicCitation.lastpage99
local.bibliographicCitation.startpage94
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, ANU
local.contributor.authoruidCuevas, Andres, u9308750
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.absseo850504 - Solar-Photovoltaic Energy
local.identifier.ariespublicationu4334215xPUB810
local.identifier.citationvolume8
local.identifier.doi10.1016/j.egypro.2011.06.108
local.identifier.scopusID2-s2.0-80052098144
local.identifier.thomsonID000298302000016
local.type.statusPublished Version

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