Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Shape control and emission wavelength extension of InP-based InAsSb nanostructures

Thumbnail Image

Date

2010

Authors

Lei, Wen
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Conference Organising Committee

Abstract

This paper presents a study on the shape control and emission wavelength extension of InP-based InAsSb nanostructures. InGaAs buffer layer, combined with low growth temperature and medium V/III ratio, provides an effective approach to fabricate InAsSb QDs. By using InGaAsSb sandwich layer to serve as both strain reducing layer and metamorphic buffer layer, the emission wavelength of InAsSb QDs can be extended well beyond 2 μm, which is very useful for their application as mid-infrared emitters.

Description

Keywords

Keywords: Emission wavelength; InGaAsSb; InP; Low growth temperature; Metamorphic buffer layer; Mid-infrared emitters; Shape control; Strain reducing layers; V/III ratio; Buffer layers; Infrared devices; Nanostructures

Citation

URI

http://hdl.handle.net/1885/83965

Collections

ANU Research Publications

Source

Materials Research Society Symposium Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

DSpace software copyright © 2002-2026 LYRASIS