Resistive switching characteristics and mechanism of thermally grown WOx thin films
Date
2011
Authors
Biju, Kuyyadi P.
Liu, Xinjun
Siddik, Manzar
Kim, Seonghyun
Shin, Jungho
Kim, Insung
Ignatiev, Alex
Hwang, Hyunsang
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Publisher
American Institute of Physics (AIP)
Abstract
Resistive switching characteristics of thermally oxidized tungsten thin films and their switching mechanism were investigated, modifying thickness of the active layer (WOx) by varying oxidation conditions. Two types of switching were observed in Pt/WOx/W
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Keywords: Active Layer; Conduction Mechanism; Counter-clockwise; Cycling endurance; Defect distribution; High electric fields; High-resistance state; Low-resistance state; Ohmic conduction; Oxidation conditions; Poole-Frenkel emission; Resistive switching; Schottky
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Journal of Applied Physics
Type
Journal article
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2037-12-31
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