Resistive switching characteristics and mechanism of thermally grown WOx thin films
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Authors
Biju, Kuyyadi P.
Liu, Xinjun
Siddik, Manzar
Kim, Seonghyun
Shin, Jungho
Kim, Insung
Ignatiev, Alex
Hwang, Hyunsang
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American Institute of Physics (AIP)
Abstract
Resistive switching characteristics of thermally oxidized tungsten thin films and their switching mechanism were investigated, modifying thickness of the active layer (WOx) by varying oxidation conditions. Two types of switching were observed in Pt/WOx/W
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Journal of Applied Physics
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2037-12-31
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