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Resistive switching characteristics and mechanism of thermally grown WOx thin films

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Date

2011

Authors

Biju, Kuyyadi P.
Liu, Xinjun
Siddik, Manzar
Kim, Seonghyun
Shin, Jungho
Kim, Insung
Ignatiev, Alex
Hwang, Hyunsang

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

Resistive switching characteristics of thermally oxidized tungsten thin films and their switching mechanism were investigated, modifying thickness of the active layer (WOx) by varying oxidation conditions. Two types of switching were observed in Pt/WOx/W

Description

Keywords

Keywords: Active Layer; Conduction Mechanism; Counter-clockwise; Cycling endurance; Defect distribution; High electric fields; High-resistance state; Low-resistance state; Ohmic conduction; Oxidation conditions; Poole-Frenkel emission; Resistive switching; Schottky

Citation

URI

http://hdl.handle.net/1885/65561

Collections

ANU Research Publications

Source

Journal of Applied Physics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.3633227

Restricted until

2037-12-31

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01_Biju_Resistive_switching_2011.pdf (1.69 MB)

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