Dynamics of light-induced FeB pair dissociation in crystalline silicon

Date

2004-11-29

Authors

Geerligs, L. J.
Macdonald, Daniel

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

The dynamics of light-induced dissociation of iron–boron (FeB) pairs in p-type crystalline silicon is investigated. The dissociation is observed to be a single-exponential process which is balanced with thermal repairing. The dissociation rate is proportional to the square of the carrier generation rate and the inverse square of the FeB concentration. This suggests that the dissociation process involves two recombination or electron capture events. A proportionality constant of 5×10⁻¹⁵s describes the dissociation rate well in the absence of other significant recombination channels. The dissociation rate decreases in the presence of other recombination channels. These results can be used for reliable detection of iron in silicon devices and materials, and for further elucidation of the electronically driven FeB dissociation reaction.

Description

Keywords

Keywords: Crystalline materials; Diffusion; Dissociation; Electron traps; Microelectronics; Silicon; Solar cells; Thermoanalysis; Carrier-injection; Crystalline silicon; FeB; Pair dissociation; Iron compounds

Citation

Source

Applied Physics Letters

Type

Journal article

Book Title

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DOI

10.1063/1.1823587

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