Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon

Abstract

The impact of boron–oxygen-related recombination centers as well as their defect kinetics have been intensely studied in boron-doped oxygen-rich p-type crystalline silicon. Experimental data for the defect in simultaneously boron- and phosphorus-doped compensated p- and n-type silicon, however, is sparse. In this study, we present time-resolved carrier lifetime measurements on Czochralski-grown silicon (Cz-Si) doped with both boron and phosphorus under illumination at 30 °C(defectgeneration) as well as at 200 °C in the dark (defect annihilation). Show more