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Boron nanobelts grown under intensive ion bombardment

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Date

2008-01-03

Authors

Li, W. T.
Boswell, R.
Fitz Gerald, J. D.

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

High-quality α-tetragonal crystalline boronnanobelts with [001] growth axis were synthesized using a novel method combining e-beam evaporation and plasma ion bombardment techniques. Intensive ion bombardment of the growingboronnanobelts at a high substrate temperature (∼1200°C) was found to be effective in increasing the atomic density, reducing the crystal disorder, and improving the yield of the nanobelts.

Description

Keywords

Keywords: Boron; Ion bombardment; Nanobelts; Atomic density; Boron nanobelts; Crystalline materials

Citation

URI

http://hdl.handle.net/1885/95088

Collections

ANU Research Publications

Source

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1116/1.2827498

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