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Crystal and faceted dendrite growth of silicon near (100)

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dc.contributor.authorYang, Xinbo
dc.contributor.authorFujiwara, K.
dc.contributor.authorGotoh, R
dc.contributor.authorMaeda, Keiichi
dc.contributor.authorNozawa, J
dc.contributor.authorKoizumi, H
dc.contributor.authorUda, S
dc.date.accessioned2015-12-10T23:26:29Z
dc.date.issued2012
dc.date.updated2016-02-24T08:47:45Z
dc.description.abstractThe crystal growth shape (CGS) and faceted dendrite growth of silicon near (1 0 0) are observed by in situ observation. The morphological transformations of the facets and curved orientations on the CGSs under different undercoolings (ΔT) are investigate
dc.identifier.issn1359-6454
dc.identifier.urihttp://hdl.handle.net/1885/67778
dc.publisherPergamon Press
dc.sourceActa Materialia
dc.subjectKeywords: Curved interface; Dendrite growth; Growth mechanisms; Growth velocity; High growth velocities; In-situ observations; Morphological transformations; Two-dimensional images; Undercoolings; Materials; Materials properties; Silicon; Dendrites (metallography) Crystal growth shape; Faceted dendrite; Silicon
dc.titleCrystal and faceted dendrite growth of silicon near (100)
dc.typeJournal article
local.bibliographicCitation.issue8
local.bibliographicCitation.lastpage3267
local.bibliographicCitation.startpage3259
local.contributor.affiliationYang, Xinbo, College of Engineering and Computer Science, ANU
local.contributor.affiliationFujiwara, K., Tohoku University
local.contributor.affiliationGotoh, R, Tohoku University
local.contributor.affiliationMaeda, Keiichi, University of Tokyo
local.contributor.affiliationNozawa, J, Tohoku University
local.contributor.affiliationKoizumi, H, Tohoku University
local.contributor.affiliationUda, S, Tohoku University
local.contributor.authoruidYang, Xinbo, u5096110
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.absseo850504 - Solar-Photovoltaic Energy
local.identifier.ariespublicationf5625xPUB1521
local.identifier.citationvolume60
local.identifier.doi10.1016/j.actamat.2012.03.010
local.identifier.scopusID2-s2.0-84859416794
local.identifier.thomsonID000304020300002
local.type.statusPublished Version

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