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Band offsets at ZnO/SiC heterojunction: Heterointerface in band alignment

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Date

2010

Authors

Ashrafi, Abm (Almamun)

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

Pulsed laser deposited ZnO layers on 6H-SiC substrates showed the six-fold symmetry, indicating a two-dimensional epitaxial growth mode. X-ray photoelectron spectroscopy was employed to study the valence band discontinuity and interface formation in the ZnO/6H-SiC heterojunction. The valence band offset was measured to be 1.38 ± 0.28 eV, leading to a conduction band offset value of 1.01 ± 0.28 eV. The resulting band lineup in epitaxial ZnO/6H-SiC heterojunction is determined to be of staggered-type alignment. Crown

Description

Keywords

Keywords: Band alignments; Band offsets; Conduction band offset; Epitaxial relationships; Hetero interfaces; In-band; Interface formation; Pulsed laser; SiC substrates; Valence band discontinuity; Valence band offsets; ZnO; ZnO layers; Alignment; Electron mobility; Band alignment; Band offsets; Epitaxial relationship; ZnO heteroepitaxy

Citation

URI

http://hdl.handle.net/1885/54770

Collections

ANU Research Publications

Source

Surface Science

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1016/j.susc.2010.08.002

Restricted until

2037-12-31

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01_Ashrafi_Band_offsets_at_ZnO/SiC_2010.pdf (528.67 KB)

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