Direct growth of nickel disilicide nanocrystals in silicon dioxide films
| dc.contributor.author | Yoon, Jong-Hwan | |
| dc.contributor.author | Lee, Gyu-Hyun | |
| dc.contributor.author | Elliman, Robert G. | |
| dc.date.accessioned | 2015-11-03T03:12:23Z | |
| dc.date.available | 2015-11-03T03:12:23Z | |
| dc.date.issued | 2006-06-13 | |
| dc.date.updated | 2015-12-08T03:21:43Z | |
| dc.description.abstract | Nickel disilicide (NiS₂)nanocrystals (NCs) have been grown in silicon-rich oxide (SiOₓ)films ion implanted with nickel by annealing at 1100°C. It was found that NiS₂ NCs grew into well-defined single crystalline structures embedded in a SiOₓ matrix and were approximately spherical in shape. The size of NCs can be influenced by limiting either the Ni or excess Si concentration. It was found that the resulting NCs could be produced with diameters in the range from 5to40nm in the SiOₓ layers with excess Si concentrations of 4–8at.% implanted with Ni concentrations of 0.1–10at.%. | |
| dc.description.sponsorship | This work was carried out under Scientists Exchange Program between the Korea Science and Engineering Foundation and the Australian Academy of Science, and supported by the Research Grant from the Kangwon National University. | en_AU |
| dc.identifier.issn | 0021-8979 | en_AU |
| dc.identifier.uri | http://hdl.handle.net/1885/16240 | |
| dc.publisher | American Institute of Physics (AIP) | |
| dc.rights | http://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 3/11/15). Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.2202740 | |
| dc.source | Journal of Applied Physics | |
| dc.subject | Keywords: Annealing; Approximation theory; Crystal structure; Embedded systems; Oxides; Semiconducting silicon compounds; Nickel disilicide (Ni S2); Silicon-rich oxide (Si Ox) films; Nanostructured materials | |
| dc.title | Direct growth of nickel disilicide nanocrystals in silicon dioxide films | |
| dc.type | Journal article | |
| local.bibliographicCitation.issue | 11 | en_AU |
| local.bibliographicCitation.startpage | 116106 | en_AU |
| local.contributor.affiliation | Yoon, Jong-Hwan, Kangwon National University , Korea, South | en_AU |
| local.contributor.affiliation | Lee, Gyu-Hyun, Kangwon University , Korea, South | en_AU |
| local.contributor.affiliation | Elliman, Robert, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
| local.contributor.authoruid | u9012877 | en_AU |
| local.description.notes | Imported from ARIES | en_AU |
| local.identifier.absfor | 020406 | en_AU |
| local.identifier.absfor | 020405 | en_AU |
| local.identifier.absfor | 100799 | en_AU |
| local.identifier.ariespublication | u4047546xPUB27 | en_AU |
| local.identifier.citationvolume | 99 | en_AU |
| local.identifier.doi | 10.1063/1.2202740 | en_AU |
| local.identifier.scopusID | 2-s2.0-33745230041 | |
| local.publisher.url | https://www.aip.org/ | en_AU |
| local.type.status | Published Version | en_AU |