Role of Ions in SiO 2  Deposition with Pulsed and Continuous Helicon Plasmas

Charles, Christine

Role of Ions in SiO 2 Deposition with Pulsed and Continuous Helicon Plasmas

Date

2002

Authors

Charles, Christine

Publisher

International Union of Pure and Applied Chemistry

Abstract

Good-quality silicon dioxide films have been deposited at low temperature (≤200 °C) using continuous and pulsed oxygen/silane plasmas coupled in a high-density, low-pressure helicon reactor. Although the total ion flux determines many of the structural

Keywords

Keywords: silicon; atomic particle; calculation; compression therapy; conference paper; density; film; ion transport; low temperature; molecular dynamics; physical phase; priority journal; transport kinetics

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http://hdl.handle.net/1885/89694

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ANU Research Publications

Source

Pure and Applied Chemistry

Type

Journal article

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Role of Ions in SiO 2 Deposition with Pulsed and Continuous Helicon Plasmas

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