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Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

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dc.contributor.authorDeenapanray, Prakash
dc.contributor.authorNyamhere, Cloud
dc.contributor.authorAuret, Francois D
dc.contributor.authorFarlow, F C
dc.date.accessioned2015-12-07T22:15:02Z
dc.date.issued2006
dc.date.updated2015-12-07T07:39:37Z
dc.description.abstractWe have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B- and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated.
dc.identifier.issn0921-4526
dc.identifier.urihttp://hdl.handle.net/1885/17717
dc.publisherElsevier
dc.sourcePhysica B
dc.subjectKeywords: Annealing; Crystal growth from melt; Epitaxial growth; Gallium; Reaction kinetics; Czochralski Si; Gallium doping; Laplace DLTS; Point defects Czochralski Si; Defects; Gallium doping; Laplace DLTS
dc.titleCharacterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS
dc.typeJournal article
local.bibliographicCitation.lastpage164
local.bibliographicCitation.startpage161
local.contributor.affiliationDeenapanray, Prakash, College of Engineering and Computer Science, ANU
local.contributor.affiliationNyamhere, Cloud, University of Pretoria
local.contributor.affiliationAuret, Francois D, University of Pretoria
local.contributor.affiliationFarlow, F C, Wright State University
local.contributor.authoruidDeenapanray, Prakash, u4018937
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationu4441299xPUB2
local.identifier.citationvolume376
local.identifier.doi10.1016/j.physb.2005.12.043
local.identifier.scopusID2-s2.0-33645232762
local.type.statusPublished Version

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