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Hydrogen Passivation of LPCVD Si3N4/SiO2/Si Stacks by Ammonia Plasma Treatment

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dc.contributor.authorJin, Haoen_AU
dc.contributor.authorWeber, Klausen_AU
dc.contributor.authorBlakers, Andrewen_AU
dc.date.accessioned2015-12-10T22:38:48Z
dc.date.issued2007
dc.date.updated2015-12-09T10:44:20Z
dc.description.abstractThe bonded hydrogen concentration in thermally annealed low-pressure chemical vapor deposition (LPCVD) Si3 N4 films increases rapidly following exposure to ammonia plasma and saturates at a concentration determined by the thermal history of the films. Where the nitride layer is deposited on oxidized silicon samples, the introduction of hydrogen into the nitride film using ammonia plasma is effective at passivating the Si- SiO2 interface. The plasma treatment does not lead to the generation of a significant number of additional interface defects, shown by lifetime and electronic paramagnetic resonance measurements. Subsequent anneals in nitrogen further improve the interface passivation.
dc.identifier.issn0013-4651
dc.identifier.urihttp://hdl.handle.net/1885/56893
dc.publisherElectrochemical Society Inc
dc.sourceJournal of the Electrochemical Society
dc.subjectKeywords: Ammonia plasma Treatment; Interface defects; Nitride films; Ammonia; Concentration (process); Hydrogen; Low pressure chemical vapor deposition; Passivation; Plasma applications; Silica; Silicon nitride
dc.titleHydrogen Passivation of LPCVD Si3N4/SiO2/Si Stacks by Ammonia Plasma Treatment
dc.typeJournal article
local.bibliographicCitation.issue6
local.bibliographicCitation.lastpageH434
local.bibliographicCitation.startpageH430
local.contributor.affiliationJin, Hao, College of Engineering and Computer Science, ANU
local.contributor.affiliationWeber, Klaus, College of Engineering and Computer Science, ANU
local.contributor.affiliationBlakers, Andrew, College of Engineering and Computer Science, ANU
local.contributor.authoruidJin, Hao, u4065013
local.contributor.authoruidWeber, Klaus, u9116880
local.contributor.authoruidBlakers, Andrew, u9113453
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor091099 - Manufacturing Engineering not elsewhere classified
local.identifier.absfor091299 - Materials Engineering not elsewhere classified
local.identifier.absseo850504 - Solar-Photovoltaic Energy
local.identifier.ariespublicationu4251866xPUB379
local.identifier.citationvolume154
local.identifier.doi10.1149/1.2716561
local.identifier.scopusID2-s2.0-34547206280
local.type.statusPublished Version

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