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Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping

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dc.contributor.authorFeng, Ruixing
dc.contributor.authorKremer, Felipe
dc.contributor.authorSprouster, D. J.
dc.contributor.authorMirzaei, Sahar
dc.contributor.authorDecoster, Stefan
dc.contributor.authorGlover, C J
dc.contributor.authorMedling, Scott
dc.contributor.authorHansen, John L
dc.contributor.authorNylandsted-Larsen, A
dc.contributor.authorRusso, Salvy P
dc.contributor.authorRidgway, Mark C
dc.date.accessioned2021-06-15T05:08:25Z
dc.date.available2021-06-15T05:08:25Z
dc.date.issued2017
dc.date.updated2020-11-23T10:29:12Z
dc.description.abstractIn this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si0.35Ge0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C+ In co-doping, the solid solubility of In in Si0.35Ge0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C-In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples.en_AU
dc.description.sponsorshipWe also thank the Australian Research Council and Australian Synchrotron for support.en_AU
dc.format.mimetypeapplication/pdfen_AU
dc.identifier.issn2166-3831en_AU
dc.identifier.urihttp://hdl.handle.net/1885/237363
dc.language.isoen_AUen_AU
dc.provenanceThis is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.en_AU
dc.publisherTaylor and Francisen_AU
dc.rights© 2016 The Authorsen_AU
dc.rights.licenseCreative Commons Attribution licenceen_AU
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_AU
dc.sourceMaterials Research Lettersen_AU
dc.source.urihttps://www.tandfonline.com/doi/full/10.1080/21663831.2016.1169229en_AU
dc.subjectSiGeen_AU
dc.subjectC + In co-dopingen_AU
dc.subjectX-ray absorption fine structureen_AU
dc.subjectHall Effecten_AU
dc.titleEnhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Dopingen_AU
dc.typeJournal articleen_AU
dcterms.accessRightsOpen Accessen_AU
local.bibliographicCitation.issue1en_AU
local.bibliographicCitation.lastpage34en_AU
local.bibliographicCitation.startpage29en_AU
local.contributor.affiliationFeng, Ruixing, College of Engineering and Computer Science, ANUen_AU
local.contributor.affiliationKremer, Felipe, College of Science, ANUen_AU
local.contributor.affiliationSprouster, D. J., Brookhaven National Laboratoryen_AU
local.contributor.affiliationMirzaei, Sahar, College of Science, ANUen_AU
local.contributor.affiliationDecoster, Stefan, KU Leuvenen_AU
local.contributor.affiliationGlover, C J, Australian Synchrotronen_AU
local.contributor.affiliationMedling, Scott, College of Science, ANUen_AU
local.contributor.affiliationHansen, John L, Aarhus Universityen_AU
local.contributor.affiliationNylandsted-Larsen, A, University of Aarhusen_AU
local.contributor.affiliationRusso, Salvy P, RMIT Universityen_AU
local.contributor.affiliationRidgway, Mark C, College of Science, ANUen_AU
local.contributor.authoruidFeng, Ruixing, u4886697en_AU
local.contributor.authoruidKremer, Felipe, u5077096en_AU
local.contributor.authoruidMirzaei, Sahar, u5056320en_AU
local.contributor.authoruidMedling, Scott, u5434598en_AU
local.contributor.authoruidRidgway, Mark C, u9001886en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matteren_AU
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciencesen_AU
local.identifier.ariespublicationu4485658xPUB890en_AU
local.identifier.citationvolume5en_AU
local.identifier.doi10.1080/21663831.2016.1169229en_AU
local.identifier.scopusID2-s2.0-84981736247
local.identifier.thomsonID000398624400003
local.publisher.urlhttps://www.tandfonline.comen_AU
local.type.statusPublished Versionen_AU

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