High-resolution refractive index and micro-raman spectroscopy of planar waveguides in KGd(WO4)2 formed by swift heavy ion irradiation

dc.contributor.authorMerchant, C.A.
dc.contributor.authorScrutton, P.
dc.contributor.authorGarcía-Blanco, S.
dc.contributor.authorHnatovsky, Kyrylo (Cyril)
dc.contributor.authorTaylor, Rod
dc.contributor.authorGarcía-Navarro, A.
dc.contributor.authorGarcía, G.
dc.contributor.authorAgullo-Lopez, F
dc.contributor.authorOlivares, J.
dc.contributor.authorHelmy, A.S.
dc.contributor.authorAitchison, J.S.
dc.date.accessioned2015-12-13T22:45:35Z
dc.date.issued2009
dc.date.updated2015-12-11T10:23:53Z
dc.description.abstractWe report on the characterization of planar waveguides formed in the Raman-active crystal KGd(WO4)2 using swift carbon, fluorine, and oxygen ion irradiation. The characterization of the waveguiding regions was performed using high-resolution microreflectivity and micro-Raman spectroscopy. The high-resolution microreflectivity measurement fully characterizes the refractive index profile of the barrier formed by amorphization of the crystal and detects other index variations not detected by the m-line technique. Raman spectroscopy measurements reveal details of the Raman properties of the crystal in the waveguiding region in relation to the rest of the sample for the different ion irradiations. Both of these measurement techniques are shown to be important for use of KGd(WO4)2 in integrated Raman-active devices.
dc.identifier.issn0018-9197
dc.identifier.urihttp://hdl.handle.net/1885/79854
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.sourceIEEE Journal of Quantum Electronics
dc.titleHigh-resolution refractive index and micro-raman spectroscopy of planar waveguides in KGd(WO4)2 formed by swift heavy ion irradiation
dc.typeJournal article
local.bibliographicCitation.issue4
local.bibliographicCitation.lastpage379
local.bibliographicCitation.startpage373
local.contributor.affiliationMerchant, C.A., University of Toronto
local.contributor.affiliationScrutton, P., University of Toronto
local.contributor.affiliationGarcía-Blanco, S., University of Toronto
local.contributor.affiliationHnatovsky, Kyrylo (Cyril), College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTaylor, Rod, Institute for Microstructural Sciences,
local.contributor.affiliationGarcía-Navarro, A., Universidad Autónoma de Madrid
local.contributor.affiliationGarcía, G., Consortium for the Exploitation of the synchroton Light Laboratory
local.contributor.affiliationAgullo-Lopez, F, Universidad Autonoma de Madrid
local.contributor.affiliationOlivares, J., Instituto de Óptica
local.contributor.affiliationHelmy, A.S., University of Toronto
local.contributor.affiliationAitchison, J.S., University of Toronto
local.contributor.authoruidHnatovsky, Kyrylo (Cyril), u4750651
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020502 - Lasers and Quantum Electronics
local.identifier.ariespublicationf5625xPUB8225
local.identifier.citationvolume45
local.identifier.doi10.1109/JQE.2009.2013216
local.identifier.scopusID2-s2.0-63649140018
local.type.statusPublished Version

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