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Pulsed laser deposited stoichiometric ZnO thin films

Date

Authors

Ashrafi, Abm (Almamun)

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

Room temperature free-exciton emission was observed in stoichiometric ZnO epilayers grown on Al2O3 substrates by pulsed laser deposition. Absorption and photoluminescence measurements clearly showed the free- exciton emissions at 3.30∼3.31 eV. This free

Keywords

Keywords: Absorption and photoluminescences; Electron phonons; Epilayers grown; Exciton recombinations; Exciton-phonon coupling; Excitonic properties; Free excitons; Free-exciton emissions; High qualities; Lattice dilation; Localization energies; Phonon energies; P Exciton-phonon coupling; Free excitons; Lattice dilation; Stoichiometry; ZnO

URI

http://hdl.handle.net/1885/36238

Collections

ANU Research Publications

Source

Proceedings of 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008)

Type

Conference paper

DOI

10.1109/COMMAD.2008.4802079

Restricted until

2037-12-31

Downloads

File

Description

01_Ashrafi_Pulsed_laser_deposited_2008.pdf (1.43 MB)

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