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Investigating Implantation Damage of Hyperdoped Semiconductors

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Authors

Dissanayake, Senali
Chow, Philippe K.
Lim, Qi
Williams, Jim
Warrender, Jeffrey M.
Sher, Meng-Ju

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Publisher

IEEE

Abstract

Hyperdoping semiconductor is one of the material candidates for intermediate band photovoltaics. We investigate implantation damage and associated defects. Time resolved terahertz spectroscopy reveals that charge carrier lifetime is hindered by defects not detected by conventional microscopic and spectroscopic techniques.

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Source

2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)

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Restricted until

2099-12-31
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