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Effect of Auger Recombination on the Performance of p-doped Quantum Dot Lasers

Date

Authors

Mokkapati, Sudha

Buda, Manuela

Jagadish, Chennupati

Tan, Hark Hoe

Publisher

American Institute of Physics (AIP)

Abstract

Experimental results on spontaneous emission rates from InGaAs quantum dot lasers that can be explained theoretically by considering the influence of nonradiative mixed state recombinations in the quantum dot-wetting layer system are presented. Our model

Keywords

Keywords: Current density; Doping (additives); Mathematical models; Semiconductor quantum dots; Auger recombination; Carrier injection densities; Moderate acceptor concentrations; Quantum dot-wetting layer system; Semiconductor lasers

URI

http://hdl.handle.net/1885/78298

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

DOI

10.1063/1.2193433

Restricted until

2037-12-31

Downloads

File

Description

01_Mokkapati_Effect_of_Auger_Recombination_2006.pdf (266.07 KB)

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