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Carrier lifetime studies of strongly compensated P-type czochralski silicon

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dc.contributor.authorMacDonald, Daniel
dc.contributor.authorCuevas, Andres
dc.contributor.authorDi Sabatino, M
dc.contributor.authorGeerligs, Lambert Johan
dc.coverage.spatialValencia Spain
dc.date.accessioned2015-12-07T22:25:28Z
dc.date.createdSeptember 1-4 2008
dc.date.issued2008
dc.date.updated2015-12-07T09:37:03Z
dc.identifier.urihttp://hdl.handle.net/1885/21307
dc.publisherConference Organising Committee
dc.relation.ispartofseriesEuropean Photovoltaic Solar Energy Conference 2008
dc.sourceProceedings of the European Photovoltaic Solar Energy Conference 2008
dc.titleCarrier lifetime studies of strongly compensated P-type czochralski silicon
dc.typeConference paper
local.bibliographicCitation.lastpage957
local.bibliographicCitation.startpage951
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, ANU
local.contributor.affiliationDi Sabatino, M, SINTEF Materials and Chemistry
local.contributor.affiliationGeerligs, Lambert Johan, Energy Research Centre of the Netherlands
local.contributor.authoruidMacDonald, Daniel, u9718154
local.contributor.authoruidCuevas, Andres, u9308750
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.absseo850504 - Solar-Photovoltaic Energy
local.identifier.ariespublicationu4628727xPUB16
local.identifier.doi10.4229/23rdEUPVSEC2008-2BP.3.2
local.type.statusPublished Version

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