High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization

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dc.contributor.authorJoyce, Hannah Jen_AU
dc.contributor.authorGao, Qiangen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorKim, Yongen_AU
dc.contributor.authorFickenscher, M Aen_AU
dc.contributor.authorPerera, Sen_AU
dc.contributor.authorHoang, Thang Ben_AU
dc.contributor.authorSmith, Leigh Men_AU
dc.contributor.authorJackson, Howard Een_AU
dc.contributor.authorYarrison-Rice, Jan Men_AU
dc.contributor.authorZhang, Xinen_AU
dc.contributor.authorZou, Jinen_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-12-08T22:43:15Z
dc.date.available2015-12-08T22:43:15Z
dc.date.issued2008
dc.date.updated2016-02-24T09:59:53Z
dc.description.abstractWe investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowires. Nanowires were grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. A high arsine flow rate, that is, a high ratio of group V to
dc.identifier.issn1616-3028
dc.identifier.urihttp://hdl.handle.net/1885/37201
dc.publisherWiley-VCH Verlag GMBH
dc.sourceAdvanced Functional Materials
dc.subjectKeywords: Electric wire; Gallium alloys; Gold; Optical materials; Optical properties; Optoelectronic devices; Semiconducting gallium; Au nanoparticles; Crystallographic defects; Dopant incorporations; High purities; Metalorganic chemical vapor depositions; Planar d
dc.titleHigh Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization
dc.typeJournal article
local.bibliographicCitation.lastpage3800
local.bibliographicCitation.startpage3794
local.contributor.affiliationJoyce, Hannah J, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKim, Yong, Dong-A University
local.contributor.affiliationFickenscher, M A, University of Cincinnati
local.contributor.affiliationPerera, S, University of Cincinnati
local.contributor.affiliationHoang, Thang B , University of Cincinnati
local.contributor.affiliationSmith, Leigh M , University of Cincinnati
local.contributor.affiliationJackson, Howard E , University of Cincinnati
local.contributor.affiliationYarrison-Rice, Jan M , University of Miami
local.contributor.affiliationZhang, Xin, University of Queensland
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.authoruidJoyce, Hannah J, u4193607
local.contributor.authoruidGao, Qiang, u4006742
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.notesImported from ARIES
local.identifier.absfor020499 - Condensed Matter Physics not elsewhere classified
local.identifier.ariespublicationu3488905xPUB146
local.identifier.citationvolume18
local.identifier.doi10.1002/adfm.200800625
local.identifier.scopusID2-s2.0-57349129635
local.identifier.thomsonID000261923700008
local.type.statusPublished Version

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