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High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors

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dc.contributor.authorKarar, Ayman
dc.contributor.authorDas, Narottam
dc.contributor.authorLeong Tan, Chee
dc.contributor.authorAlameh, Kamal
dc.contributor.authorTak Lee, Yong
dc.contributor.authorKarouta, Fouad
dc.date.accessioned2015-11-15T23:47:28Z
dc.date.available2015-11-15T23:47:28Z
dc.date.issued2011-09-28
dc.date.updated2016-02-24T10:38:11Z
dc.description.abstractWe report the experimental characterization of high-responsivity plasmonics-based GaAsmetal-semiconductor-metalphotodetector (MSM-PD) employing metal nano-gratings. Both the geometry and light absorption near the designed wavelength are theoretically and experimentally investigated. The measured photocurrent enhancement is 4-times in comparison with a conventional single-slit MSM-PD. We observe reduction in the responsivity as the bias voltage increases and the input light polarization varies. Our experimental results demonstrate the feasibility of developing a high-responsivity, low bias-voltage high-speed MSM-PD.
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/16486
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 16/11/15). Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.3625937
dc.sourceApplied Physics Letters
dc.subjectKeywords: Experimental characterization; GaAs; High-speed; Metal semiconductor metal photodetector; Nano-gratings; Photocurrent enhancement; Responsivity; Bias voltage; Gallium arsenide; Heterojunctions; Metals; Plasmons; Semiconducting gallium; Photodetectors
dc.titleHigh-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors
dc.typeJournal article
local.bibliographicCitation.issue13en_AU
local.bibliographicCitation.lastpage3
local.bibliographicCitation.startpage133112en_AU
local.contributor.affiliationKarar, Ayman, Edith Cowan University, Australiaen_AU
local.contributor.affiliationDas, Narottam, Edith Cowan University, Australiaen_AU
local.contributor.affiliationTan, Chee Leong, Gwangju Institute of Science and Technology (GIST), Korea, Southen_AU
local.contributor.affiliationAlameh, Kamal, Edith Cowan University, Australiaen_AU
local.contributor.affiliationLee, Yong Tak, Gwangju Institute of Science and Technology, Korea, Southen_AU
local.contributor.affiliationKarouta, Fouad, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoruidu4703981en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor091299en_AU
local.identifier.ariespublicationu4153526xPUB62en_AU
local.identifier.citationvolume99en_AU
local.identifier.doi10.1063/1.3625937en_AU
local.identifier.scopusID2-s2.0-80053556474
local.identifier.thomsonID000295618000072
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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