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Vanadium Doped ZnS Nanoparticles: Effect of Vanadium Concentration on Structural, Optical and Electrical Properties

dc.contributor.authorRana, Sohel
dc.contributor.authorDas, Sujan Kumar
dc.contributor.authorRahman, Obaidur
dc.contributor.authorAhmed, Farid
dc.contributor.authorHossain, Abul
dc.date.accessioned2025-02-12T23:04:31Z
dc.date.available2025-02-12T23:04:31Z
dc.date.issued2020
dc.date.updated2024-01-07T07:15:22Z
dc.description.abstractVanadium (V) doped zinc sulfide (ZnS) nanoparticles have been synthesized in the doping concentration of 0.2, 0.4, 0.6, 0.8, and 1 wt% by chemical co-precipitation method, where de-ionized water was used as solvent and the precursors were Zn(CH3COO)2⋅2H2O, Na2S and V2O5. The synthesized nanoparticles have been characterized by XRD, UV–Vis spectroscopy, FTIR spectroscopy and precision impedance analyzer (PIA). XRD studies revealed that all the samples exhibit cubic structure and confirmed the incorporation of V into ZnS lattice. The calculated average crystallite size was varied in the range of 2.16–2.82 nm. The red shifting of the absorption edge was observed from the UV–Vis study and the direct optical band gap (Eg) was decreased from 3.63 to 3.35 eV with increasing the doping concentrations. The various vibrational modes were observed by the FTIR spectroscopy. The characteristic vibrational peaks were found near at 666, 615 and 478 cm−1. The PIA study showed that frequency dependent dielectric constant, loss tangent and ac resistivity were high at the lower frequency, while the ac conductivity was low at higher frequency. The bandgap tuning behavior of ZnS nanoparticles with V-doping concentrations may find interesting applications in optoelectronic devices.
dc.description.sponsorshipThe funding was grant by Ministry of Science and Technology, Government of the People’s Republic of Bangladesh, NST Fellowship
dc.format.mimetypeapplication/pdfen_AU
dc.identifier.issn1229-7607
dc.identifier.urihttps://hdl.handle.net/1885/733735220
dc.language.isoen_AUen_AU
dc.publisherSpringer
dc.rights© The Korean Institute of Electrical and Electronic Material Engineers 2020
dc.sourceTransactions on Electrical and Electronic Materials
dc.subjectZnS nanoparticles
dc.subjectVanadium
dc.subjectXRD
dc.subjectUV–vis
dc.subjectFTIR
dc.subjectPIA
dc.subjectCo-precipitation
dc.titleVanadium Doped ZnS Nanoparticles: Effect of Vanadium Concentration on Structural, Optical and Electrical Properties
dc.typeJournal article
local.bibliographicCitation.lastpage621
local.bibliographicCitation.startpage612
local.contributor.affiliationRana, Sohel, Jahangirnagar University
local.contributor.affiliationDas, Sujan Kumar, OTH Other Departments, ANU
local.contributor.affiliationRahman, Obaidur, Jahangirnagar University
local.contributor.affiliationAhmed, Farid, Jahangirnagar University
local.contributor.affiliationHossain, Abul, Jahangirnagar University
local.contributor.authoruidDas, Sujan Kumar, u7069089
local.description.embargo2099-12-31
local.description.notesImported from ARIES
local.identifier.absfor400800 - Electrical engineering
local.identifier.ariespublicationa383154xPUB16654
local.identifier.citationvolume22
local.identifier.doi10.1007/s42341-020-00265-1
local.identifier.scopusID2-s2.0-85096390017
local.identifier.thomsonIDWOS:000591216300002
local.publisher.urlhttps://link.springer.com/
local.type.statusPublished Version
publicationvolume.volumeNumber22

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