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Defects Formed During 1 MeV Si Ion-Irradiation of GeSi/Si Strained Layer Heterostructures at Elevated Temperature

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Date

1999

Authors

Glasko, J
Elliman, Robert
Zou, Jin
Cockayne, David John Hugh
Fitz Gerald, John

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

The strain relief observed in GeSi/Si strained-layer heterostructures irradiated with MeV ions at elevated temperature (253°C) is shown to be consistent with the accumulation of excess vacancies in the alloy layer. Partial recovery of the asgrown strain

Description

Keywords

Keywords: Strain relaxation; Annealing; Dislocations (crystals); High temperature effects; Interfaces (materials); Ion bombardment; Radiation effects; Semiconducting films; Semiconducting silicon; Semiconducting silicon compounds; Strain; Stress relaxation; Stress GeSi/Si strained-layer heterostructures; Intrinsic defects; Ion implantation; Strain relaxation; Vacancies

Citation

URI

http://hdl.handle.net/1885/93673

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31

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