Bistable Resistive Switching in Hafnium-Silicate Thin Films

Date

2010

Authors

Nawaz (Saleh), Muhammad
Venkatachalam, Dinesh
Belay, Kidane
Kim, Tae-Hyun
Elliman, Robert

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

We report on the resistive switching mechanism of dc magnetron sputtered hafnium-silicates (HfxSi1-xO2) memory thin films. It is observed that the electroforming of these films depends on the thickness and stoichiometry of the insulator as well as on the

Description

Keywords

Keywords: Bistables; Conducting state; DC voltage; Low-conducting state; Non-polar; Resistive random access memory; Resistive switching; Resistive switching mechanisms; Short pulse; Silicate thin films; Electroforming; Hafnium; Magnetrons; Microelectronics; Silicat

Citation

Source

2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2010.5699730

Restricted until

2037-12-31