Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Bistable Resistive Switching in Hafnium-Silicate Thin Films

Date

Authors

Nawaz (Saleh), Muhammad

Venkatachalam, Dinesh

Belay, Kidane

Kim, Tae-Hyun

Elliman, Robert

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

We report on the resistive switching mechanism of dc magnetron sputtered hafnium-silicates (HfxSi1-xO2) memory thin films. It is observed that the electroforming of these films depends on the thickness and stoichiometry of the insulator as well as on the

Keywords

Keywords: Bistables; Conducting state; DC voltage; Low-conducting state; Non-polar; Resistive random access memory; Resistive switching; Resistive switching mechanisms; Short pulse; Silicate thin films; Electroforming; Hafnium; Magnetrons; Microelectronics; Silicat

URI

http://hdl.handle.net/1885/51566

Collections

ANU Research Publications

Source

2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings

Type

Conference paper

DOI

10.1109/COMMAD.2010.5699730

Restricted until

2037-12-31

Downloads

File

Description

01_Nawaz (Saleh)_Bistable_Resistive_Switching_2010.pdf (879.82 KB)