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Photoluminescence and charge storage characteristics of silica nanocrystals: The role of stress-induced interface defects

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dc.contributor.authorYuan, Cao
dc.contributor.authorLei, Wen
dc.date.accessioned2015-12-10T22:20:44Z
dc.date.issued2010
dc.date.updated2016-02-24T10:01:24Z
dc.description.abstractSiO2 nanocrystals embedded in Lu2O3 thin film were fabricated using pulsed-laser deposition method. Two dimensional finite element calculations clearly reveal that SiO2 nanocrystals certainly experienced great compressive stress in Lu2O3 thin film. This may lead to a great deal of stress-induced defects at the interface of SiO2 nanocrystals embedded in Lu2O3 thin film and thus induced the observed photoluminescence peak and charge storage properties. The findings presented here indicate that the matrix environment of the nanocrystals plays a significant role in determining their electrical and optical properties.
dc.identifier.issn0169-4332
dc.identifier.urihttp://hdl.handle.net/1885/52059
dc.publisherElsevier
dc.sourceApplied Surface Science
dc.subjectKeywords: Charge storage; Charge storage characteristic; Electrical and optical properties; Finite element calculations; Interface defects; matrix; Metal-insulator-semiconductor devices; Photoluminescence peak; Stress-induced; Defects; Deposition; Electric properti Metal-insulator-semiconductor devices; Nanocrystals; Photoluminescence; Stress
dc.titlePhotoluminescence and charge storage characteristics of silica nanocrystals: The role of stress-induced interface defects
dc.typeJournal article
local.bibliographicCitation.lastpage3141
local.bibliographicCitation.startpage3138
local.contributor.affiliationYuan, Cao, Central China Normal University
local.contributor.affiliationLei, Wen, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidLei, Wen, u4450995
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor029999 - Physical Sciences not elsewhere classified
local.identifier.ariespublicationU3488905xPUB238
local.identifier.citationvolume256
local.identifier.doi10.1016/j.apsusc.2009.11.087
local.identifier.scopusID2-s2.0-77349083911
local.type.statusPublished Version

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