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Production and Processing of Semiconductor Nanocrystals and Nanostructures for Photonic Applications

dc.contributor.authorWilliams, Jamesen_AU
dc.contributor.authorElliman, Roberten_AU
dc.contributor.authorLever McGowan, Penelopeen_AU
dc.contributor.authorWong-Leung, Jenniferen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.coverage.spatialSydney Australia
dc.date.accessioned2015-12-13T23:07:29Z
dc.date.available2015-12-13T23:07:29Z
dc.date.createdSeptember 25-27 2002
dc.date.issued2003
dc.date.updated2015-12-12T08:09:14Z
dc.description.abstractThis brief review focuses on the production and processing of nanocrystals and nanostructures in silicon, silicon dioxide and compound semiconductors. In each area the use of ion beams to either form or process the nanostructures features prominently. Three specific examples are given, i) Ion irradiation of semiconductors can be used for the formation of novel nanostructures such as the generation of a band of small voids or cavities that exhibit interesting properties, ii) Direct ion implantation into silicon dioxide can lead to the production of small nanocrystals, of silicon for example, that can emit light and have potential applications in novel optical devices on a silicon chip, iii) Novel, optically-emitting semiconductor nanostructures such as quantum wells and quantum dots can be grown by metal organic chemical vapour deposition on both gallium arsenide and indium phosphide substrates and ion irradiation can be used to tune the wavelength of the emitted light for device applications.
dc.identifier.isbn1876855207
dc.identifier.urihttp://hdl.handle.net/1885/86225
dc.publisherInstitute of Materials Engineering Australasia
dc.relation.ispartofseriesNational Conference and Exhibition on Nanotechnology 2003
dc.sourceNanotechnology
dc.subjectKeywords: Annealing; Crystal structure; Diffusion; Ion bombardment; Ion implantation; Light emission; Metallorganic chemical vapor deposition; Multilayers; Point defects; Precipitation (chemical); Rutherford backscattering spectroscopy; Semiconducting silicon compo
dc.titleProduction and Processing of Semiconductor Nanocrystals and Nanostructures for Photonic Applications
dc.typeConference paper
local.bibliographicCitation.lastpage80
local.bibliographicCitation.startpage74
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLever McGowan, Penelope, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidWilliams, James, u8809701
local.contributor.authoruidElliman, Robert, u9012877
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidLever McGowan, Penelope, u9915543
local.contributor.authoruidWong-Leung, Yin-Yin (Jennifer), u9607716
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor100799 - Nanotechnology not elsewhere classified
local.identifier.ariespublicationMigratedxPub15027
local.identifier.scopusID2-s2.0-1942485333
local.type.statusPublished Version

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