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Wavelength-sized, tunable nanocavity in deeply etched InP/InGaAsP/InP photonic crystals

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dc.contributor.authorKicken, H. H. J. E.
dc.contributor.authorBarbu, I.
dc.contributor.authorvan der Heijden, Rob W.
dc.contributor.authorKarouta, F.
dc.contributor.authorNötzel, R.
dc.contributor.authorvan der Drift, E.
dc.contributor.authorSalemink, H. W. M.
dc.date.accessioned2016-05-31T01:40:41Z
dc.date.available2016-05-31T01:40:41Z
dc.date.issued2009
dc.description.abstractWavelength-sized point defect cavities coupled to access waveguides are reported for deeply etched InP⁄InGaAsP⁄InP two-dimensional photonic crystals. The observed quality factor of 60 is comparable to those found for one-row defect Fabry–Perot cavities and for simple point defect cavities in membranes. The quality factor was changed by varying the number of rows of holes. Upon infiltration of the holes with liquid crystal, frequency tuning was demonstrated.en_AU
dc.description.sponsorshipThis work is part of the research program of the Stichting voor Fundamenteel Onderzoek der Materie (FOM), which is financially supported by the Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO). Part of this research is supported by NanoNed, a technology program of the Dutch Ministry of Economic Affairs via the STW Foundation.en_AU
dc.identifier.issn0146-9592en_AU
dc.identifier.urihttp://hdl.handle.net/1885/101792
dc.publisherOptical Society of Americaen_AU
dc.rights© 2009 Optical Society of Americaen_AU
dc.sourceOptics Lettersen_AU
dc.titleWavelength-sized, tunable nanocavity in deeply etched InP/InGaAsP/InP photonic crystalsen_AU
dc.typeJournal articleen_AU
local.bibliographicCitation.issue14en_AU
local.bibliographicCitation.lastpage2209en_AU
local.bibliographicCitation.startpage2207en_AU
local.contributor.affiliationKicken, H H J E, Eindhoven University of Technology, Netherlandsen_AU
local.contributor.affiliationBarbu, Ionut, Eindhoven University of Technology, Netherlandsen_AU
local.contributor.affiliationvan der Heijden, Rob W., Eindhoven University of Technology, Netherlandsen_AU
local.contributor.affiliationKarouta, Fouad, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationNötzel, Richard, Eindhoven University of Technology, Netherlandsen_AU
local.contributor.affiliationvan der Drift, E., Delft University of Technology, Netherlandsen_AU
local.contributor.affiliationSalemink, H W M, Delft University of Technology, Netherlandsen_AU
local.contributor.authoruidu4703981en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020504en_AU
local.identifier.absseo970102en_AU
local.identifier.ariespublicationU3488905xPUB2702en_AU
local.identifier.citationvolume34en_AU
local.identifier.doi10.1364/OL.34.002207en_AU
local.publisher.urlhttp://www.osa.org/en-us/home/en_AU
local.type.statusPublished Versionen_AU

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