Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium-gallium-zinc oxide thin film transistors
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Authors
Huang, Xiaoming
Wu, Chenfei
Lu, Hai
Ren, Fang-Fang
Chen, Dunjun
Jiang, Rong
Zhang, R.
Zheng, Youdou
Xu, Qingyu
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Elsevier
Abstract
The electrical properties of amorphous indium-gallium-zinc oxide thin film transistors are measured in the temperature range from 70 to 300 K. The device shows normal enhancement mode operation with significantly reduced drain current at low temperature.
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Solid-State Electronics
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2037-12-31
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