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Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium-gallium-zinc oxide thin film transistors

Date

Authors

Huang, Xiaoming

Wu, Chenfei

Lu, Hai

Ren, Fang-Fang

Chen, Dunjun

Jiang, Rong

Zhang, R.

Zheng, Youdou

Xu, Qingyu

Publisher

Elsevier

Abstract

The electrical properties of amorphous indium-gallium-zinc oxide thin film transistors are measured in the temperature range from 70 to 300 K. The device shows normal enhancement mode operation with significantly reduced drain current at low temperature.

Keywords

Keywords: Carrier transport mechanisms; Carrier transport process; Channel conductance; Field-effect mobilities; Gate bias dependence; Indium gallium zinc oxides; Temperature increase; Transport mechanism; Carrier transport; Electric properties; Gallium; Indium; Te Indium gallium zinc oxide (IGZO); Thin film transistors (TFT); Transport mechanisms

URI

http://hdl.handle.net/1885/62338

Collections

ANU Research Publications

Source

Solid-State Electronics

Type

Journal article

DOI

10.1016/j.sse.2013.04.025

Restricted until

2037-12-31

Downloads

File

Description

01_Huang_Temperature_and_gate_bias_2013.pdf (924.13 KB)