Effects of Thermal Stress on Interdiffusion in InGaAsN/GaAs Quantum Dots
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Gao, Qiang
Fu, Lan
Jagadish, Chennupati
Tan, Hark Hoe
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American Institute of Physics (AIP)
Abstract
The control of interdiffusion in InGaAsN/GaAs quantum dots by thermal stress was discussed. It was observed that by depositing TiO2 layers without degrading the pholuminescence properties, the thermal interdiffusion was effectively suppressed. A controlled blueshifting of the band gap was achieved by combining annealing temperature and TiO2 thickness. It was suggested that the method has significant potential for optoelectronic device integration using selective-area defect engineering.
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Applied Physics Letters
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2037-12-31
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