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Effects of Thermal Stress on Interdiffusion in InGaAsN/GaAs Quantum Dots

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Date

2004

Authors

Gao, Qiang
Fu, Lan
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

The control of interdiffusion in InGaAsN/GaAs quantum dots by thermal stress was discussed. It was observed that by depositing TiO2 layers without degrading the pholuminescence properties, the thermal interdiffusion was effectively suppressed. A controlled blueshifting of the band gap was achieved by combining annealing temperature and TiO2 thickness. It was suggested that the method has significant potential for optoelectronic device integration using selective-area defect engineering.

Description

Keywords

Keywords: Annealing; Atomic force microscopy; Interdiffusion (solids); Monochromators; Photodiodes; Photoluminescence; Semiconducting indium; Solid state lasers; Thermal stress; Titanium oxides; Band gap; Blueshifting; Electron beam evaporation; Rapid thermal annea

Citation

URI

http://hdl.handle.net/1885/77122

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.1760886

Restricted until

2037-12-31

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01_Gao_Effects_of_Thermal_Stress_on_2004.pdf (160.5 KB)

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