Physical mechanisms and scaling laws of K-shell double photoionization

Date

2009-02-20

Authors

Hoszowska, J.
Kheifets, Anatoli
Dousse, Jean-Claude
Berset, M
Bray, Igor
Cao, W
Fennane, K
Kavcic, M
Szlachetko, J
Szlachetko, M

Journal Title

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Volume Title

Publisher

American Physical Society

Abstract

We report on the photon energy dependence of the K-shell double photoionization (DPI) of Mg, Al, and Si. The DPI cross sections were derived from high-resolution measurements of x-ray spectra following the radiative decay of the K-shell double vacancy states. Our data evince the relative importance of the final-state electron-electron interaction to the DPI. By comparing the double-to-single K-shell photoionization cross-section ratios for neutral atoms with convergent close-coupling calculations for He-like ions, the effect of outer shell electrons on the K-shell DPI process is assessed. Universal scaling of the DPI cross sections with the effective nuclear charge for neutral atoms is revealed.

Description

Keywords

Keywords: Atoms; Electric impedance; Electron-electron interactions; Electrons; Helium; Laws and legislation; Packet networks; Photoionization; Semiconducting silicon compounds; Convergent close-coupling calculations; Cross sections; Double photoionizations; Double

Citation

Physical Review Letters 102.7 (2009): 073006/1-4

Source

Physical Review Letters

Type

Journal article

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