III-V semiconductor nanowires for optoelectronic device applications
Date
Authors
Joyce, Hannah J
Gao, Qiang
Jagadish, Chennupati
Kim, Yong
Zou, Jin
Smith, Leigh M
Jackson, Howard E
Yarrison-Rice, Jan M
Parkinson, Patrick
Johnston, Michael B
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Pergamon Press
Abstract
III-V semiconductor nanowires are promising candidates for optoelectronic device applications due to their unique one dimensional geometry. High quantum efficiency, defined as QE=τnr/(τnr+τr), where τnr is the non-radiative lifetime and τr is the rad
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Source
Progress in Quantum Electronics