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Investigation of interface properties in oxide passivated boron diffused silicon

Date

Authors

Nursam, Natalita

Weber, Klaus

Jin, Hao

Ren, Yongling

Smith, Paul

Publisher

Elsevier

Abstract

Electron paramagnetic resonance (EPR) measurements were employed to observe the dominant defect at the thermally grown (1 1 1) Si-SiO2 interface, namely the Pb center, of samples with oxides grown at moderate temperatures. The presence of boron diffusion

Keywords

Keywords: Boron diffused; Boron diffusions; Electron paramagnetic resonance; Emitter sheet resistance; Higher temperatures; Interface property; Moderate temperature; Moisture barriers; Surface concentration; Boron; Boron compounds; Degradation; Electric resistance; Boron emitter; Degradation; Electron paramagnetic resonance; Si-SiO 2 interface

URI

http://hdl.handle.net/1885/23562

Collections

ANU Research Publications

Source

Current Applied Physics

Type

Journal article

DOI

10.1016/j.cap.2010.02.053

Restricted until

2037-12-31

Downloads

File

Description

01_Nursam_Investigation_of_interface_2010.pdf (315 KB)