Investigation of interface properties in oxide passivated boron diffused silicon
Date
Authors
Nursam, Natalita
Weber, Klaus
Jin, Hao
Ren, Yongling
Smith, Paul
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Electron paramagnetic resonance (EPR) measurements were employed to observe the dominant defect at the thermally grown (1 1 1) Si-SiO2 interface, namely the Pb center, of samples with oxides grown at moderate temperatures. The presence of boron diffusion
Description
Citation
Collections
Source
Current Applied Physics
Type
Book Title
Entity type
Access Statement
License Rights
Restricted until
2037-12-31
Downloads
File
Description