Laser induced memory bits in photorefractive LiNbO3 and LiTaO3

Date

2008

Authors

Juodkazis, Saulius
Mizeikis, Vyngantas
Sudzius, Markas
Misawa, Hiroaki
Kitamura, Kenji
Takekawa, Shunji
Gamaly, Eugene G
Rode, Andrei V
Krolikowski, Wieslaw

Journal Title

Journal ISSN

Volume Title

Publisher

Springer

Abstract

We study experimentally the formation of refractive index voxels (volume elements) in photorefractive LiNbO3 and LiTaO3 crystals illuminated with high irradiance femtosecond laser pulses. We used 150 fs pulses at 800 nm wavelength (energy 6-50 nJ) tightly focused inside the crystals in a single shot regime. This resulted in a formation of a micrometer size region of elevated refractive index, which may be used as memory bits in information storage/retrieval application. The maximum refractive index change of 5×10-4 was recorded in undoped LiNbO3 at an average light intensity of ∼TW/cm2 that is close to the breakdown threshold. A simple setup for photorefractive recording and in situ monitoring of the refractive index changes has been proposed.

Description

Keywords

Keywords: Data storage equipment; Lasers; Photoreactivity; Refractive index; Laser induced; Laser processing; Memory bits; Photo-refractive; Volume elements; Optical properties

Citation

Source

Applied Physics A: Materials Science and Processing

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1007/s00339-008-4641-9

Restricted until

2037-12-31