Structural characteristics and resistive switching properties of thermally prepared TiO2 thin films
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Cao, Xun
Li, Xiaomin
Yu, Weidong
Zhang, Yiwen W
Yang, Rui
Liu, Xinjun
Kong, Jingfang
Shen, Wenzhong
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Elsevier
Abstract
Polycrystalline TiO2 thin films were formed on Pt(1 1 1)/Ti/SiO2/Si by thermal oxidation of Ti films with temperatures ranging from 600 °C to 800 °C. Results of Raman spectra testing indicate that the structure of the oxidized TiO2 films is rutile phase
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Journal of Alloys and Compounds
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2037-12-31
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