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A model of electrical isolation in GaN and ZnO bombarded with light ions

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Date

2004

Authors

Titov, A I
Karasev, P
Kucheyev, Sergei

Journal Title

Journal ISSN

Volume Title

Publisher

MAIK Nauka-Interperiodica

Abstract

A model of a decrease in electrical conductivity of GaN and ZnO under the effect of irradiation with fast ions is suggested. The formation of complexes composed of a doping-impurity atom and the simplest defect formed by the ion beam is considered as the

Description

Keywords

Citation

URI

http://hdl.handle.net/1885/81600

Collections

ANU Research Publications

Source

Semiconductors

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1134/1.1808825

Restricted until

2037-12-31

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01_Titov_A_model_of_electrical_2004.pdf (98.11 KB)

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