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Do Palladium-dopant Pairs exist in Silicon?

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dc.contributor.authorDogra, Rakesh
dc.contributor.authorBrett, David Alisdair
dc.contributor.authorByrne, Aidan
dc.contributor.authorMestnik-Filho, Jose
dc.contributor.authorLi, Y
dc.contributor.authorRidgway, Mark C
dc.date.accessioned2015-12-13T23:03:47Z
dc.date.issued2006
dc.date.updated2015-12-12T07:51:16Z
dc.description.abstractThe local structure and stability of an impurity complex of palladium in silicon has been studied on an atomic scale by perturbed angular correlation spectroscopy using the 100Pd/Rh probe nuclei. Palladium exists as an acceptor Pd- in n-type silicon and donor Pd+/2+ in p-type silicon. Owing to the Coulomb attraction between oppositely charged impurities, the probability of pair formation between palladium and dopants (P, As, Sb and B) seems to be quite favourable. In contrast, the impurity complex of the form PdSi-VSi has been identified in highly doped n-type silicon by its characteristic electric field gradient. The density function theory calculations of electric field gradient (EFG) for PdSi-VSi defect complex were consistent with the experimentally observed EFG.
dc.identifier.issn0921-4526
dc.identifier.urihttp://hdl.handle.net/1885/85083
dc.publisherElsevier
dc.sourcePhysica B
dc.subjectKeywords: Crystal impurities; Electric field effects; Probability density function; Semiconductor doping; Silicon; Spectroscopy; Acceptor; Density function theory calculations; Donor; Dopants; Electric field gradient; Perturbed angular correlation; Palladium compou Palladium; Perturbed angular correlation; Silicon
dc.titleDo Palladium-dopant Pairs exist in Silicon?
dc.typeJournal article
local.bibliographicCitation.lastpage248
local.bibliographicCitation.startpage245
local.contributor.affiliationDogra, Rakesh, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBrett, David Alisdair, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationByrne, Aidan, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationMestnik-Filho, Jose, Instituto de Pesquisas Energeticas e Nucleares
local.contributor.affiliationLi, Y, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidDogra, Rakesh, u4153072
local.contributor.authoruidBrett, David Alisdair, u4025007
local.contributor.authoruidByrne, Aidan, u8900906
local.contributor.authoruidLi, Y, u4231926
local.contributor.authoruidRidgway, Mark C, u9001886
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.ariespublicationMigratedxPub13287
local.identifier.citationvolume376-377
local.identifier.doi10.1016/j.physb.2005.12.064
local.identifier.scopusID2-s2.0-33645151966
local.type.statusPublished Version

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