Proton irradiation of n-type GaAs

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dc.contributor.authorGoodman, S
dc.contributor.authorAuret, Francois D
dc.contributor.authorRidgway, Mark C
dc.contributor.authorMyburg, G
dc.date.accessioned2015-12-13T23:34:57Z
dc.date.issued1999
dc.date.updated2015-12-12T09:38:06Z
dc.description.abstractIn this paper, we report on the defects introduced during 40 keV, 95 keV, 400 keV and 1 MeV proton irradiation of Si-doped epitaxial GaAs. These protons introduce defects Ep1 (E1), Ep2 (E2), Ep4 (E3), Ep5, Ep6 and a metastable defect Ep3. Defect Ep6 has a large capture cross-section (>10-13 cm-2) suggesting that it may be a physically large defect or a defect cluster.
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/93688
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Crystal defects; Deep level transient spectroscopy; Epitaxial growth; Proton irradiation; Semiconducting silicon; Semiconductor doping; Semiconductor growth; Defect clusters; Semiconducting gallium arsenide Deep level transient spectroscopy; Defects; GaAs; Proton irradiation
dc.titleProton irradiation of n-type GaAs
dc.typeJournal article
local.bibliographicCitation.lastpage449
local.bibliographicCitation.startpage446
local.contributor.affiliationGoodman, S, University of Pretoria
local.contributor.affiliationAuret, Francois D, University of Pretoria
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationMyburg, G, University of Pretoria
local.contributor.authoruidRidgway, Mark C, u9001886
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020204 - Plasma Physics; Fusion Plasmas; Electrical Discharges
local.identifier.ariespublicationMigratedxPub25080
local.identifier.citationvolumeB148
local.identifier.scopusID2-s2.0-0033513838
local.type.statusPublished Version

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